Chemistry; Metallurgy

C                Chemistry; Metallurgy
C01      inorganic chemistry
C06      explosives; matches
C07      organic chemistry
C13      sugar industry
C21      metallurgy of iron
C30      crystal growth
Etched multi-layer sheets // US9445517
A method includes creating an opening in a first outer layer of a multilayer sheet of material, the sheet of material having three or more layers of material, including the first outer layer and a second outer layer. A selective etchant is introduced through the opening, where the etchant selectively etches an interior metal layer of the multilayer sheet of material compared with the first and second outer layers. The selective etchant is permitted to etch material of the interior metal layer under the first outer layer.
Galvanic process for filling through-holes with metals, in particular of printed circuit boards with copper // US9445510
The present invention relates to a galvanic process for filling through-holes with metals. The process is particularly suitable for filling through-holes of printed circuit boards with copper. The process comprises the following steps: formation of a narrow part in the center of a through-hole by electroplating; and filling the through-hole obtained in step with metal by electroplating.
Solder alloy, solder paste, and electronic circuit board // US9445508
A solder alloy is a tin-silver-copper solder alloy, and contains tin, silver, copper, bismuth, nickel, and cobalt. Relative to the total amount of the solder alloy, the silver content is 2 mass % or more and 4 mass % or less, the nickel content is 0.01 mass % or more and 0.15 mass % or less, and the cobalt content is 0.001 mass % or more and 0.008 mass % or less.
Electrically conductive composition, electrically conductive film using the composition and a method of producing the same // US9445501
An electrically conductive composition, containing an electrically conductive polymer, and an onium salt compound as a dopant to the electrically conductive polymer, an electrically conductive film formed by shaping the composition and a method of producing the electrically conductive film.
Epoxy resin composition and printed circuit board using same // US9445500
The epoxy resin composition according to one embodiment of the present invention contains an epoxy compound, a curing agent, and an inorganic filler, wherein the inorganic filler contains spherical alumina .
Epoxy resin composition, and printed circuit board using same // US9445499
According to one embodiment of the present invention, an epoxy resin composition comprises an epoxy compound, a curing agent, and an inorganic filler, wherein the inorganic filler includes alumina and aluminum nitride .
Epoxy resin composition and printed circuit board // US9445498
The epoxy resin composition according to one embodiment of the present invention contains an epoxy compound, a curing agent, and an inorganic filler, wherein the inorganic filler contains alumina and boron nitride .
Method of producing a high-frequency heat treatment coil // US9445461
A method is provided to produce a high-frequency heat treatment coil including a heating section for heating a heat treatment portion of an outer joint member for a constant velocity universal joint. The heating section is formed by machining in an integrated manner, and is joined to another section to complete the high-frequency heat treatment coil.
Variable width transverse flux electric induction coils // US9445460
A variable width transverse flux electric inductor has a fixed powered coil section and associated box-like moveable passive coil sections that electromagnetically couple with magnetic flux generated by current flowing through the fixed powered section. The passive coil sections can be transversely moved across the workpiece to accommodate induction heating of workpieces having different widths or track movement of the workpiece. Alternatively the fixed powered coil section and associated moveable coil sections may be connected to each other through flexible connections, sliding contacts or other means, such as clamps, so that an electrical connection can be maintained between both in any relative position.
Electroluminescent earphone with bending-resistance and high-brightness // US9445186
An electroluminescent earphone with a bending-resistance and a high-brightness includes earphone wires having bending-resistant electroluminescent wires, earbuds, an electroluminescent wire driver and an audio inputting plug. Each bending-resistant electroluminescent wire includes: a plurality of central electrodes; a luminescent layer coated on outer surfaces of the central electrodes; a transparent conductive layer coated on an outer surface of the luminescent layer; an outer electrode made of a plurality of wires arranged on an outer surface of the transparent conductive layer; and a transparent plastic covering the outer electrode and the transparent conductive layer. The bending-resistant electroluminescent wire is parallel with an earphone audio wire or coils around an outer surface of the earphone audio wire. A colored transparent plastic covers the bending-resistant electroluminescent wire and the earphone audio wire to form the earphone wire having the bending-resistant electroluminescent wire.
Near-infrared cut filter and solid-state imaging device // US9445017
There are provided a near-infrared cut filter that effectively uses near-infrared absorbing glass and a near-infrared absorbing dye and is excellent in a near-infrared shielding property, and a high-sensitivity solid-state imaging device including the same. A near-infrared cut filter includes: a near-infrared absorbing glass substrate made of CuO-containing fluorophosphate glass or CuO-containing phosphate glass; and a near-infrared absorbing layer containing a near-infrared absorbing dye and a transparent resin , on at least one principal surface of the near-infrared absorbing glass substrate, wherein an average value of a transmittance in a 400 nm to 550 nm wavelength range is 80% or more, and an average value of a transmittance in a 650 nm to 720 nm wavelength range is 15% or less.
Piezoelectric thin-film resonator, method for fabricating same, filter and duplexer having an interposed film // US9444429
A piezoelectric thin-film resonator includes: a substrate; a piezoelectric film having a lower piezoelectric film provided on the substrate and an upper piezoelectric film provided on the lower piezoelectric film; lower and upper electrodes that face each other through at least a part of the piezoelectric film; an interposed film that is interposed between the lower piezoelectric film and the upper piezoelectric film and is located in an outer circumferential part of a resonance region in which the lower and upper electrodes face each other through the piezoelectric film, the interposed film not being provided in a central part of the resonance region; an upper surface of the lower piezoelectric film having a first roughness in a region in which the interposed film is not provided and a second roughness in another region in which the interposed film is provided, the first roughness being smaller than the second roughness.
Method of manufacturing a Ti:sapphire crystal fiber by laser-heated pedestal growth // US9444216
The present invention relates to a crystal fiber, and more particularly to a Ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The Ti: sapphire single crystal is grown by means of laser-heated pedestal growth method into a crystal fiber of a predetermined diameter. The as-grown crystal fiber is annealed for enhancing its fluorescence and reducing the infra-red residual absorption. The annealed crystal fiber is inserted into a glass capillary and is grown into a single-clad crystal fiber. The wide band light source comprises: a pumping source for providing a pumping light; a single-clad Ti: sapphire crystal fiber for absorbing the pumping light and emitting the wide band light.
Proton exchange membrane fuel cell with open pore cellular foam // US9444117
The present application relates generally to electrochemical devices, for example proton exchange membrane fuel cells or electrolysers. The present application employs a metal foam as a common fluid flow manifold between adjacent fuel cells and avoids the use of expensive metal end plates. The common fluid flow manifold is provided by the metal foam with no separator/gas barrier provided.
Process for producing cathode active material for lithium ion secondary battery, cathode for lithium ion secondary battery, and lithium ion secondary battery // US9444099
To provide a cathode active material for a lithium ion secondary battery, and its production process.
A lithium-containing composite oxide containing a transition metal element and a composition are contacted to obtain particles having a compound containing a metal element attached, which are mixed with a compound which generates HF by heating, and the mixture is heated to obtain particles having a covering layer containing the metal element and fluorine element formed on the surface of the lithium-containing composite oxide. Composition : a composition having a compound containing no Li element and containing at least one metal element selected from Mg, Ca, Sr, Ba, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Pb, Cu, Zn, Al, In, Sn, Sb, Bi, La, Ce, Pr, Nd, Gd, Dy, Er and Yb dissolved or dispersed in a solvent.
Potato-shaped graphite particles with low impurity rate at the surface, method for preparing the same // US9444092
Modified graphite particles obtained from graphite or based on graphite, the said particles having impurities in their internal structure and having on the surface a low, even nil, rate of an impurity or several impurities. In addition, these particles have at least one of the following characteristics:
    • a tab density between 0.3 and 1.5 g/cc;
    • a potatolike shape; and
    • a granulometric dispersion such that the D90/D10 ratio varies between 2 and 5 and the particles have a size between 1 and 50 μm.

These particles can be used for fuel cells, electrochemical generators, or as moisture absorbers and/or oxygen absorbers and they have important electrochemical properties. The electrochemical cells and batteries thus obtained are stable and safe.
Fluoropolymer compositions // US9444084
A composition for solubilizing a fluoropolymer is described. Further described, is how the fluoropolymer composition is obtained, as well as the process for its preparation and its use as a coating applicant. The composition can include a solubilized fluoropolymer and a solvent blend of a diester and dimethylsulfoxyde.
π-conjugated heavy-metal polymers for organic white-light-emitting diodes // US9444065
A polymer mixture emits a broad spectrum of visible light that appears white or near-white in the aggregate. The polymer mixture comprises two components in the active layer. A heavy atom, such as platinum and/or iridium, present in the backbone of the mixture acts via a spin-orbit coupling mechanism to cause the ratio of fluorescent to phosphorescent light emission bands to be of approximately equal strength. These two broad emissions overlap, resulting in an emission spectrum that appears to the eye to be white.
Synthesis of new small molecules/oligomers with high conductivity and absorption for optoelectronic application // US9444060
Disclosed are semiconducting or conducting organic small molecules and oligomers that contain a central, electron rich, functionalized dihydrodicyclopentylanthracene core that is connected to at least one or two comparatively electron deficient monomeric unit or units that feature group 16 heteroatoms sulfur, selenium or tellurium or combinations thereof. Multiple electron rich cores can be linked together through one or more alkynyl linkages. The small molecules and oligomers can have the following generic structure and can be used in areas such as organic photovoltaic materials:

Organometallic complex, light-emitting element, light-emitting device, electronic device, and lighting device // US9444059
A novel substance capable of emitting phosphorescence is provided. An organometallic complex represented by General Fomulae or . In the formulae, M represents iridium, platinum, palladium, or rhodium, R1 represents a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 10 carbon atoms, and R2 to R7 separately represent hydrogen or a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms.

Preparation of pi-extended naphthalene diimides and their use as semiconductor // US9444058
The present invention provides the compounds of formulae


and electronic devices comprising these compounds.
Heterocyclic compound and organic light-emitting device including the same // US9444056
A heterocyclic compound is represented by Formula 1 below. An organic light-emitting device includes a first electrode, a second electrode and an organic layer between the first electrode and the second electrode. The organic layer includes the heterocyclic compound.


Organic light emitting devices including the heterocyclic compound of Formula 1 exhibit high efficiency, low voltages, high brightness, and long lifespans.
Organic electroluminescent device // US9444055
An organic electroluminescent device comprising, between an anode and a cathode, a hole-transporting layer, a luminous layer and an electron-transporting layer, wherein the hole-transporting layer contains an arylamine compound having a molecular structure to which three or more triphenylamine skeletons are singly bonded or bonded through a divalent hydrocarbon group and an arylamine compound having a molecular structure to which two triphenylamine skeletons are singly bonded or bonded through the divalent hydrocarbon group. The device excels in hole and electron injection/transport property, stability and durability in the form of thin films, and is highly efficient, becomes luminous on a low driving voltage, and has a long life.
Compound for organic optoelectronic device and organic light emitting diode including the same // US9444054
A compound for an organic optoelectronic device is represented by the following Chemical Formula 1:

Aromatic amine derivative and electroluminescence device using the same // US9444053
Provided are a novel aromatic amine derivative having a specific structure and an organic electroluminescence device in which an organic thin layer comprising a single layer or plural layers including a light emitting layer is interposed between a cathode and an anode, wherein at leas one layer of the above organic thin layer contains the aromatic amine derivative described above in the form of a single component or a mixed component. Thus, the organic electroluminescence device is less liable to be crystallized in molecules, improved in a yield in producing the organic electroluminescence device and extended in a lifetime.
Charge-transporting varnish // US9444052
This charge-transporting varnish, which contains a solvent, an electron-accepting dopant substance, and an aryldiamine compound represented by formula , imparts a charge-transporting thin film that has high transparency and can evince favorable element characteristics when applied to an organic EL element.


Method of manufacturing light-emitting device, and evaporation donor substrate // US9444051
The present invention relates to a donor substrate and a method of manufacturing a light-emitting device. The donor substrate includes a reflective layer including an opening portion, a light absorption layer covering the opening portion of the reflective layer over the reflective layer, a heat insulating layer including an opening portion in a position overlapped with the opening portion of the reflective layer over the light absorption layer, and a material layer including a light-emitting material covering the opening portion of the heat insulating layer over the heat insulating layer. A target substrate and the donor substrate are disposed to face each other, and an EL layer is formed over the target substrate by performing light irradiation from a rear surface of the donor substrate.
Methods for forming one or more crystalline layers on a substrate // US9444049
A method for forming a crystalline film of a material is provided, including depositing a solution, having a base critical speed separating deposition regimes, on a substrate such that a crystalline film is formed. The solution is deposited at a speed greater than the base critical speed and the crystalline film has a crystal structure characteristic of a crystalline film formed from the solution at a speed less than the base critical speed. In another aspect, a crystalline film is formed on a base film by depositing a solution on the base film. The solution has a critical speed between deposition regimes, and the solution is deposited at a speed greater than or equal to the critical speed, such that a crystalline film is formed on the base film. A device is disclosed, the device having a film made from any of the disclosed methods and an electrical lead.
Reduced oxides having large thermoelectric ZT values // US9444026
Doped and partially-reduced oxide thermoelectric materials. The thermoelectric materials can be single-doped or multi-doped and display a thermoelectric figure of merit of 0.2 or higher at 1050 K. Methods of forming the thermoelectric materials involve combining and reacting suitable raw materials and heating them in a graphite environment to at least partially reduce the resulting oxide. Optionally, a reducing agent such as lanthanum boride, titanium carbide, titanium nitride, or titanium boride can be incorporated into the starting materials prior to the reducing step in graphite. The reaction product can be sintered to form a dense thermoelectric material.
Method of manufacturing thermoelectric material and thermoelectric material prepared by the method and thermoelectric generator // US9444025
Provided is a method of manufacturing a Pb—Te based thermoelectric material, the method comprising: forming a Pb—Te based by mixture mixing element lead, element tellurium and a dopant; melting and then quenching the mixture; and obtaining a thermoelectric sintered body by hot-pressing a molded body obtained after the quenching.
Phosphor sheet and light emitting device containing the same // US9444023
The phosphor sheet of the present invention mainly includes a sheet material that is formed by mixing and solidifying of a phosphor powder and an adhesive material. The sheet material subsequently forms a first surface that receives a light source, and forms a second surface that is located on the opposite side to the first surface for scattering a light source. In addition, the distribution ratio of the phosphor powder as well as the adhesive material within the phosphor sheet is based mainly on the different positions and different distances towards the light source; the distribution ratio of the phosphor powder and the adhesive material increases gradually from the first surface towards the second surface. The phosphor of the present invention is designed to be a sheet material, so as to enable the overall volume of the light emitting device to be reduced. Moreover, distribution ratio of the phosphor powder that is within the phosphor sheet is based on the different positions and different distances towards the light source; and the concentration of the phosphor powder increases gradually from the positions that are closest to the light source to the positions that are furthest away from the light source, so as to prevent the part of highly concentration of phosphor powder within the phosphor sheet coming in direct contact with the light emitting heat source, and thereby causing the deterioration of the phosphor sheet. This may then enables the life span of the light emitting device to be increased.
Semiconductor nanocrystals and compositions and devices including same // US9444008
A semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with an improved photoluminescence quantum efficiency. Also disclosed are populations of semiconductor nanocrystals, compositions and devices including a semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. In one embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 65%. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising zinc, cadmium, and sulfur and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material. In a further embodiment, a semiconductor nanocrystal includes a core comprises a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation. In a further embodiment, a semiconductor nanocrystal including a core comprises a first semiconductor material comprising zinc, cadmium, and selenium and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation.
Multi-layer-coated quantum dot beads // US9443998
Disclosed herein are coated beads made of a primary matrix material and containing a population of quantum dot nanoparticles. Each bead has a multi-layer surface coating. The layers can be two or more distinct surface coating materials. The surface coating materials may be inorganic materials and/or polymeric materials. A method of preparing such particles is also described. The coated beads are useful for composite materials for applications such as light-emitting devices.
Apparatus for controlling the flow of a gas in a process chamber // US9443753
Apparatus for controlling the flow of a gas in a process chamber is provided herein. In some embodiments, an apparatus for controlling the flow of a gas in a process chamber having a processing volume within the process chamber disposed above a substrate support and a pumping volume within the process chamber disposed below the substrate support may include an annular plate surrounding the substrate support proximate a level of a substrate support surface of the substrate support, wherein the annular plate extends radially outward toward an inner peripheral surface of the process chamber to define a uniform gap between an outer edge of the annular plate and the inner peripheral surface, wherein the uniform gap provides a uniform flow path from the processing volume to the pumping volume.
Back grinding sheet // US9443751
The present invention relates to a back grinding sheet having an unevenness-absorbing layer on a substrate , in which the unevenness-absorbing layer is a layer formed of a film-forming composition containing a urethane acrylate and a polymerizable monomer except component and the layer satisfies the following requirements to : a loss tangent at 70° C. measured at a frequency of 1 Hz is 1.5 or more, a relaxation rate 300 seconds after a square of the unevenness-absorbing layer is compressed at 25° C. and a compressive load of 10 N is 30% or less, and a storage elastic modulus at 25° C. measured at a frequency of 1 Hz is 1.0 to 10.0 MPa. The BG sheet of the present invention has excellent absorptivity of uneven portions such as bumps in a semiconductor wafer and can suppress formation of gaps between bumps and the BG sheet and simultaneously suppress a phenomenon where the resin layer of a BG sheet oozes from the edges of a roll when the BG sheet is wound up in the form of roll.
Dicing sheet with protective film-forming layer, and method for producing chip // US9443750
A dicing sheet with a protective film-forming layer includes a protective film-forming layer on an adhesive layer of an adhesive sheet with a peel strength adjusting layer being interposed therebetween. The adhesive sheet is composed of a base film and the adhesive layer. The dicing sheet with a protective film-forming layer may also include a laminate of the peel strength adjusting layer and the protective film-forming layer arranged in the inner circumferential part of the adhesive sheet; the adhesive layer is exposed in the outer circumferential part of the adhesive sheet; and the peel strength between the peel strength adjusting layer and a protective film that is obtained by curing the protective film-forming layer is 0.05-5 N/25 mm.
Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composition comprising a specific organic compound // US9443739
A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material with 0.1≦x<1 in the presence of a chemical mechanical polishing composition comprising: inorganic particles, organic particles, or a mixture or composite thereof, at least one type of an oxidizing agent, at least one type of an organic compound which comprises at least {k} moieties , but excluding salts whose anions are inorganic and whose only organic cation is [NR11R12R13R14]+, wherein {k} is 1, 2 or 3, is a hydroxyl , alkoxy , heterocyclic alkoxy , carboxylic acid , carboxylate , amino , heterocyclic amino , imino , heterocyclic imino , phosphonate ), phosphate ), phosphonic acid 2), phosphoric acid 2) moiety, or their protonated or deprotonated forms, R1, R2, R7, R9 is—independently from each other—alkyl, aryl, alkylaryl, or arylalkyl, R3, R4, R5, R8, R10 is—independently from each other—H, alkyl, aryl, alkylaryl, or arylalkyl, R6 is alkylene, or arylalkylene, R11, R12, R13 is—independently from each other—H, alkyl, aryl, alkylaryl, or arylalkyl, and R11, R12, R13 does not comprise any moiety , R14 is alkyl, aryl, alkylaryl, or arylalkyl, and R14 does not comprise any moiety , and an aqueous medium.
Silylene compositions and methods of use thereof // US9443736
A silicon precursor composition is described, including a silylene compound selected from among: silylene compounds of the formula: wherein each of R and R1 is independently selected from organo substituents; amidinate silylenes; and bis silylenes. The silylene compounds are usefully employed to form high purity, conformal silicon-containing films of SiO2, Si3N4, SiC and doped silicates in the manufacture of microelectronic device products, by vapor deposition processes such as CVD, pulsed CVD, ALD and pulsed plasma processes. In one implementation, such silicon precursors can be utilized in the presence of oxidant, to seal porosity in a substrate comprising porous silicon oxide by depositing silicon oxide in the porosity at low temperature, e.g., temperature in a range of from 50° C. to 200° C.

Semi-polar III-nitride films and materials and method for making the same // US9443727
A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.
Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium // US9443718
Provided is a method including forming a film including a predetermined element, oxygen and at least one element selected from a group consisting of nitrogen, carbon and boron on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate wherein the source gas contains the predetermined element, chlorine and oxygen with a chemical bond of the predetermined element and oxygen, and supplying a reactive gas to the substrate wherein the reactive gas contains the at least one element selected from the group consisting of nitrogen, carbon and boron.
Method and device for measuring temperature of substrate in vacuum processing apparatus // US9443715
A method and device for determining temperature of a substrate in a vacuum processing apparatus during a process of the substrate are disclosed, the substrate to be measured is placed on a susceptor in the vacuum processing apparatus for a manufacture process, and the method includes: selecting i wavelengths from radiance emitted from the susceptor through a substrate, where i is a natural number greater than 1; obtaining at least i pieces of radiance corresponding to the selected i wavelengths; and calculating the temperature of the substrate based on the i pieces of radiance and the i wavelengths, by using a mathematical equation: E=T×M, where E is the ith radiant quantity corresponding to the ith wavelength λi, T is transmittance of the substrate, which is a function of thickness d of a film grown on the substrate, and M is blackbody radiation equation, which is a function of the ith wavelength λi and the substrate temperature T.
Oxidizing aqueous cleaner for the removal of post-etch residues // US9443713
An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.
Methods for plasma processing // US9443702
Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.
Low energy ion beam etch // US9443697
A carbonaceous material is removed using a low energy focused ion beam in the presence of an etch-assisting gas. Applicant has discovered that when the beam energy of the FIB is lowered, an etch-assisting gas, such as O2, greatly increases the etch rate. In one example, polyimide material etched using a Xe+ plasma FIB with a beam energy from 8 keV to 14 keV and O2 as an etch-assisting gas, the increase in etch rate can approach 30× as compared to the default mill rate.
Dielectric resin composition for film capacitor and film capacitor // US9443655
To increase the heat resistance of a film capacitor, a dielectric resin composition is used as a material for a dielectric resin film used in a film capacitor, the dielectric resin composition being cured by mixing and crosslinking two or more organic materials having functional groups that react with each other to provide a cured article. At least one pair highly cohesive atomic groups which has a molecular cohesive energy equal to or higher than that of a methyl group and capable of cohering with each other due to the molecular cohesive energy is linked to the organic material. The highly cohesive atomic groups form a cohesive portion serving as pseudo-crosslinking.
Soft magnetic core having excellent high-current DC bias characteristics and core loss characteristics and method of manufacturing same // US9443652
Provided are a soft magnetic core having an excellent high current DC biased characteristic and an excellent core loss characteristic and a manufacturing method thereof. The method includes the steps of: after classifying nanocrystalline grains obtained by grinding metal ribbons prepared by using a rapid solidification process , mixing alloy powders so that a particle size distribution is configured to have a particle size of 75˜100 μm with 10˜85 wt %, a particle size of 50˜75 μm with 10˜70 wt %, and a particle size 5˜50 μm with 5˜20 wt %, to thus prepare the soft magnetic cores by using nanocrystalline alloy powders having an excellent high current DC biased characteristic and an excellent core loss characteristic.
Insulated wire for vehicle use and cable for vehicle use // US9443645
An insulated wire for vehicle use includes a conductor and an insulating layer disposed on an outer circumference of the conductor. The insulating layer comprises a halogen-free flame retardant cross-linkable resin composition containing a base polymer, and a silane coupling agent and a metal hydroxide which are added to the base polymer. The base polymer includes, as major components, an ethylene-vinyl acetate copolymer and an acid-modified olefin resin having a Tg of −55° C. or lower at a ratio : of 70:30 to 100:0 and has an acetic acid content of 50% to 70% by mass. The silane-coupling agent is added in an amount of 1 to 5 parts by mass and the metal hydroxide is added in an amount of 100 to 250 parts by mass relative to 100 parts by mass of the base polymer.
Insulated wire, electrical equipment, and method of producing an insulated wire // US9443643
An insulated wire, containing: a conductor; a foamed insulating layer; and an unfoamed filled layer on the outer circumference of the foamed insulating layer, in which the filled layer contains a partial discharge resistant material, which insulated wire has all of high partial discharge inception voltage, resistance to partial discharge, heat resistance, and abrasion resistance .
Method for manufacturing dispersion liquid of carbon nanotube aggregates // US9443640
Provided is a process for producing a dispersion liquid of carbon nanotube aggregates in which the carbon nanotube aggregates are dispersed in a dispersion medium, comprising the two steps: a step of adsorbing a dispersant to carbon nanotube aggregates by physical dispersion treatment in a dispersion medium to prepare a carbon nanotube paste with a particle size of 100 nm to 20 μm resulting from partial dissociation of a mass of the carbon nanotube aggregates; and a step of dispersing the carbon nanotube paste by ultrasonic dispersion treatment. A process for producing a dispersion liquid of carbon nanotube aggregates with reduced destruction and breakage of graphite structure of a carbon nanotube aggregate can be provided.
Cement curing formulation and method for high-level radioactive boron waste resins from nuclear reactor // US9443628
A cement curing formulation and curing method for high-level radioactive boron waste resins from a nuclear reactor. The curing formulation comprises the following raw materials: cement, lime, water, curing aids and additives. The curing method comprises: weighing the raw materials and the high-level radioactive boron waste resins, and adding lime into a curing container; then adding the high-level radioactive boron waste resins; feeding other raw materials under stirring; adding the cement and supplementing water depending on the moisture state of the cement, and stirring until uniform; and standing and maintaining after stirring until uniform. The curing formulation has the features of a high curing containment rate, high strength of the cured body, better water resistance, better freeze-thaw resistance, and low radioactive leakage.
 
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